Magnetic tunnel junctions (MTJ) are a key spintronics device for emerging sensor applications in data-storage technology. These devices have 70% magnetoresistance (MR) at room temperature, and 107% MR at 13K. The layer structure of the MTJ is 80Ru-40CoFeB-50RuTa-40CoFeB-15Al₂O₃-50CoFeB-9Ru-54FeCo-350CrMnPt (in Å).

By studying the temperature and voltage dependence of the MR, we show that the barrier quality is a key factor in the tunneling process. This work is collaborative with the NVE Corporation.

Liou Group